g1 s mhop microelectronics c orp. a STS2622A symbolv ds v gs i dm 100 w a p d c 1.25 -55 to 150 i d units parameter 20 3.4 13.5 c/w vv 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 3.4a 90 @ vgs=2.5v 60 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jul,22,2010 1 details are subject to change without notice. a t a =25 c t a =70 c 2.7 a t a =70 c 0.8 w dual n-channel enhancement mode field effect transistor sot 26 top view s2 g2 d1 s1 d2 12 3 6 54 g 1 d 1 s 1 g 2 d 2 s 2 green product ver 2.0
4 symbol min typ max units bv dss 20 v 1 i gss 100 na v gs(th) 0.5 v 48 g fs 9.5 s c iss 230 pf c oss 55 pf c rss 35 pf q g 7 nc 7.2 nc q gs 13.5 nc q gd 1.6 t d(on) 4.5 ns t r 0.9 ns t d(off) 1.9 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =4.5v , i d =3.4a v ds =5v , i d =3.4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =16v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =2.5v , i d =2.8a 60 67 90 m ohm c f=1.0mhz c v ds =10v,i d =3.4a, v gs =4.5v drain-source diode characteristics and maximum ratings STS2622A www.samhop.com.tw jul,22,2010 2 v sd diode forward voltage v gs =0v,i s =1a 0.8 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ 0.78 1.5 ver 2.0
STS2622A www.samhop.com.tw jul,22,2010 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature ver 2.0 10 86 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 1 . 5 v v g s = 2 v v g s = 2 . 5 v v g s = 4 . 5 v 10 8 6 4 2 0 0 0.5 3.0 2.5 2.0 1.5 1.0 -55 c tj=125 c 25 c 120 100 80 60 40 20 1 1 2 4 6 8 10 v g s =4.5v v g s =2.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =2.5v i d =2.8a v g s =4.5v i d = 3.4a 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua
STS2622A www.samhop.com.tw jul,22,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current ver 2.0 120100 8060 40 20 0 0.5 3.0 3.5 4.0 4.5 0 2.5 2.0 1.5 1.0 25 c 125 c 75 c i d =3.4a 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 125 c 75 c crss coss ciss 300 250 200 150 100 50 0 4 6 8 10 12 0 2 5 43 2 1 0 0 1 2 3 4 5 6 7 8 v ds = 10v i d =3.4a 1 10 100 10 1 0.1 100 6 60 vds=10v,id=1a vgs=4.5v td(on) tr td(off ) tf 0.1 1 10 20 10 1 0.1 0.03 80 v gs =4.5v single pulse t a =25 c r d s ( o n) l im it dc 10 s 100ms 10 m s 1ms 1 0 0us
STS2622A www.samhop.com.tw jul,22,2010 5 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance ver 2.0
STS2622A www.samhop.com.tw jul,22,2010 6 package outline dimensions ver 2.0 sot 26 l detail "a" millimeters inches symbols d e 2.700 3.100 2.500 3.100 e1 1.400 1.800 e e1 b 0.300 0.500 c 0.090 0.200 a a1 0.000 0.130 0.700 1.120 l1 l l1 0 o 10 o 0.106 0.122 0.098 0.122 0.055 0.071 0.012 0.020 0.004 0.008 0.000 0.005 0.028 0.044 0 o 10 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 5 4 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.550 0.012 0.022 0.350 0.800 0.014 0.031 detail "a"
STS2622A www.samhop.com.tw jul,22,2010 7 sot 26 tape and reel data sot 26 carrier tape sot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 m ax r0.3 r0. 3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1 ver 2.0
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